FQS4410TF

FQS4410TF Datasheet

FQS4410

Part	Datasheet
FQS4410TF	FQS4410TF (pdf)

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FQS4410 FQS4410 Single N-Channel, Logic Level, Power MOSFET May 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. • 10A, 30V, RDS on = = 10 V • Low gate charge typical 21 nC • Low Crss typical 145 pF • Fast switching • Improved dv/dt capability • 175°C maximum junction temperature rating Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS dv/dt TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 70°C Drain Current - Pulsed Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation TC = 25°C Linear Derating Factor Operating and Storage Temperature Range Note 1 Note 3 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient FQS4410 30 10 8 50 ± 20 -55 to +175 Units V A V V/ns W W/°C °C Units °C/W 2000 Fairchild Semiconductor International FQS4410 Electrical Characteristics Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Unit s Off Characteristics BVDSS / IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

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FQS4410

FQS4410

Single N-Channel, Logic Level, Power MOSFET

May 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
• 10A, 30V, RDS on = = 10 V
• Low gate charge typical 21 nC
• Low Crss typical 145 pF
• Fast switching
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS dv/dt

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 70°C

Drain Current - Pulsed

Gate-Source Voltage

Peak Diode Recovery dv/dt

Power Dissipation TC = 25°C Linear Derating Factor

Operating and Storage Temperature Range

Note 1 Note 3

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Ambient

FQS4410 30 10 8 50 ± 20
-55 to +175

Units V A V

V/ns W

W/°C °C

Units °C/W
2000 Fairchild Semiconductor International

FQS4410

Electrical Characteristics

Parameter

TC = 25°C unless otherwise noted

Test Conditions

Min Typ

Unit s

Off Characteristics

BVDSS / IDSS

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

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Datasheet ID: FQS4410TF 515463