FDS4780

FDS4780 Datasheet

FDS4780

Part	Datasheet
FDS4780	FDS4780 (pdf)

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March 2003 FDS4780 FDS4780 40V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • A, 40 V. RDS ON = VGS = 10 V • Low gate charge 30 nC • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 Pin 1 SO-8 SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1c Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS4780 FDS4780 13’’ Ratings 40 ± 20 45 to +150 50 125 25 Tape width 11mm Units °C/W °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS4780 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD=20V, ID=10.8A Drain-Source Avalanche Current 240 mJ Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 32 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V, VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th

PDF Datasheet Preview

March 2003

FDS4780

FDS4780
40V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• A, 40 V. RDS ON = VGS = 10 V
• Low gate charge 30 nC
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability

SO-8

Pin 1 SO-8 SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1c Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4780

FDS4780
13’’

Ratings
40 ± 20 45 to +150
50 125 25

Tape width 11mm

Units
°C/W °C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS4780

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy

Single Pulse, VDD=20V, ID=10.8A

Drain-Source Avalanche Current
240 mJ

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 32 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V, VDS = 0 V
mV/°C
100 nA

On Characteristics Note 2

VGS th

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Datasheet ID: FDS4780 514315