FQPF6N90
FQPF6N90 Datasheet
FQPF6N90
| Part | Datasheet |
|---|---|
FQPF6N90 |
FQPF6N90 (pdf) |
| PDF Datasheet Preview |
|---|
| QFET N-CHANNEL • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge 40nC Typ. • Extended Safe Operating Area • Lower RDS ON Typ. ABSOLUTE MAXIMUM RATINGS Symbol VDSS IDM VGS EAS IAR EAR dv/dt TJ, TSTG Characteristics Drain-to-Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC = 25°C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds THERMAL RESISTANCE Characteristics Junction-to-Case Junction-to-Ambient FQPF6N90 BVDSS = 900V RDS ON = ID = 3.4A TO-220F Gate Drain Source Value 900 ±30 710 56 −55 to +150 Units V A V mJ A mJ V/ns W/°C Typ. − − Max. Units °C/W 1999 Fairchild Semiconductor Corporation FQPF6N90 QFET N-CHANNEL ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise specified Symbol BVDSS VGS th IGSS IDSS Drain-to-Source Leakage Current RDS on gfs Ciss Coss Crss td on |
| More datasheets: M1716 SL001 | M1716 SL005 | M1716 SL002 | DFR0355 | CY8CKIT-145-40XX | FDS6993 | CY28411ZXC | CY28411ZXCT | 6439 SL002 | 6439 SL001 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQPF6N90 Datasheet file may be downloaded here without warranties.