FDS6993
FDS6993 Datasheet
FDS6993
| Part | Datasheet |
|---|---|
FDS6993 |
FDS6993 (pdf) |
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| FDS6993 June 2003 FDS6993 Dual P-Channel MOSFET These P-Channel MOSFETs are made using FSC’s technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. • Q1 P-Channel RDS on = VGS = RDS on = VGS = • Q2 P-Channel RDS on = VGS = RDS on = VGS = RDS on = VGS = • High power and handling capability in a widely used surface mount package DD2 DD1 SO-8 Pin 1 SO-8 S2 G G1 S S1 S Absolute Maximum Ratings TA = 25°C unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6993 FDS6993 13” ±25 to +150 78 40 Tape width 12mm Units °C/W °C/W Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS6993 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate-Body Leakage On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VGS = 0 V, ID = µA VGS = 0 V, ID = µA ID = µA, Referenced to 25°C ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VDS = V, VGS = 0 V VGS = ±25 V, VDS = 0 V VGS = ±8 V, VDS = 0 V mV/°C ±100 nA ±100 VDS = VGS, ID = µA |
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