FQPF1P50
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FQPF1P50 (pdf) |
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FQPF1P50 FQPF1P50 500V P-Channel MOSFET December 2000 QFETTM These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology. • -1.03A, -500V, RDS on = = -10 V • Low gate charge typical 11 nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220F FQPF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQPF1P50 -500 ± 30 110 28 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2000 Fairchild Semiconductor International |
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