FGH30N120FTDTU
FGH30N120FTDTU Datasheet
FGH30N120FTD 1200V, 30A Trench IGBT
| Part | Datasheet |
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FGH30N120FTDTU |
FGH30N120FTDTU (pdf) |
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| FGH30N120FTD 1200V, 30A Trench IGBT FGH30N120FTD 1200V, 30A Trench IGBT • Field stop trench technology • High speed switching • Low saturation voltage VCE sat = 1.6V IC = 30A • High input impedance • RoHS compliant • Induction heating and Microwave oven • Soft switching applications November 2008 Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. COLLECTOR FLANGE Absolute Maximum Ratings VCES VGES IC ICM 1 IF PD TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 100oC TC = 25oC TC = 100oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1200 ± 25 60 30 90 30 339 132 -55 to +150 -55 to +150 300 Typ. Max. Units V A W oC Units oC/W oC/W oC/W 2008 Fairchild Semiconductor Corporation FGH30N120FTD 1200V, 30A Trench IGBT Package Marking and Ordering Information Device Marking Device FGH30N120FTD FGH30N120FTDTU Package TO-247 Reel Size Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 30mA, VCE = VGE IC = 30A, VGE = 15V IC = 30A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 600V, IC = 30A, RG = VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 30A, RG = VGE = 15V, Resistive Load, TC = 125oC VCE = 600V, IC = 30A, VGE = 15V 1200 ±250 5140 FGH30N120FTD 1200V, 30A Trench IGBT Electrical Characteristics of the Diode TC = 25°C unless otherwise noted Parameter Test Conditions Diode Forward Voltage IF = 30A |
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