FQP90N10V2

FQP90N10V2 Datasheet

FQP90N10V2/FQPF90N10V2

Part	Datasheet
FQP90N10V2	FQP90N10V2 (pdf)

Related Parts	Information
FQPF90N10V2	FQPF90N10V2

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FQP90N10V2/FQPF90N10V2 FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds on is required. • 90 A, 100V, RDS on = = 10 V • Low gate charge typical 147 nC • Low Crss typical 300 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 FQP Series TO-220F FQPF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. FQP90N10V2 FQPF90N10V2 360 * ± 30 2430 -55 to +175 Units V A V mJ A mJ

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FQP90N10V2/FQPF90N10V2

FQP90N10V2/FQPF90N10V2
100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds on is required.
• 90 A, 100V, RDS on = = 10 V
• Low gate charge typical 147 nC
• Low Crss typical 300 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

FQP Series

TO-220F

FQPF Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

FQP90N10V2 FQPF90N10V2
360 *
± 30
2430
-55 to +175

Units V A V mJ A mJ

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Datasheet ID: FQP90N10V2 515364