FQPF18N20V2

FQPF18N20V2 Datasheet

FQP18N20V2/FQPF18N20V2

Part	Datasheet
FQPF18N20V2	FQPF18N20V2 (pdf)

Related Parts	Information
FQPF18N20V2YDTU	FQPF18N20V2YDTU
FQP18N20V2	FQP18N20V2

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FQP18N20V2/FQPF18N20V2 FQP18N20V2/FQPF18N20V2 200V N-Channel MOSFET QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. • 18A, 200V, RDS on = = 10 V • Low gate charge typical 20 nC • Low Crss typical 25 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 FQP Series TO-220F FQPF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQP18N20V2 FQPF18N20V2 ± 30 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP18N20V2

PDF Datasheet Preview

FQP18N20V2/FQPF18N20V2

FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
• 18A, 200V, RDS on = = 10 V
• Low gate charge typical 20 nC
• Low Crss typical 25 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

FQP Series

TO-220F

FQPF Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current - Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQP18N20V2 FQPF18N20V2
± 30
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

FQP18N20V2

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Datasheet ID: FQPF18N20V2 515295