FQU7N10LTU

FQU7N10LTU Datasheet

FQD7N10L / FQU7N10L

Part	Datasheet
FQU7N10LTU	FQU7N10LTU (pdf)

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FQD7N10L / FQU7N10L FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET December 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. • 5.8A, 100V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 12 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • Low level gate drive requirments allowing direct operation from logic drives D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds FQD7N10L / FQU7N10L 100 ± 20 50 25 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics

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FQD7N10L / FQU7N10L

FQD7N10L / FQU7N10L
100V LOGIC N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
• 5.8A, 100V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical 12 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirments allowing
direct operation from logic drives

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQD7N10L / FQU7N10L 100 ± 20 50 25
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

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Datasheet ID: FQU7N10LTU 515261