FDU6676AS
FDU6676AS Datasheet
FDU6676AS
| Part | Datasheet |
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FDU6676AS |
FDU6676AS (pdf) |
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| FDU6676AS FDU6676AS N-Channel SyncFET 30V, 90A, The FDU6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDU6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. • DC/DC converter April 2008 • RDS ON = Max, VGS = 10V • RDS ON = Max, VGS = 4.5V • High performance trench technology for extremely low RDS ON • Low Gate Charge • High power and current handling capability • Includes SyncFET Schottky diode I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Note 1a Power Dissipation for Single Operation Note 1 Note 1a TJ, TSTG Note 1b Operating and Storage Junction Temperature Range Ratings 30 ±20 90 100 70 to +150 Thermal Characteristics Thermal Resistance junction to Case Note 1 Thermal Resistance junction to Ambient Note 1a Thermal Resistance junction to Ambient Note 1b Package Marking and Ordering Information Device Marking Device Package Reel Size FDU6676AS FDU6676AS I-PAK TO-251 FDU6676AS_F071 Note 4 I-PAK Tube Tape width N/A N/A Units °C/W Quantity 75 2008 Fairchild Semiconductor Corporation FDU6676AS Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15V,ID = 16A Drain-Source Avalanche Current 108 250 16 Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=125°C IGSS Leakage VGS = ±20 V, VDS = 0 V 500 13 ±100 |
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