FQU10N20LTU

FQU10N20LTU Datasheet

FQD10N20L / FQU10N20L N-Channel MOSFET

Part	Datasheet
FQU10N20LTU	FQU10N20LTU (pdf)

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FQD10N20L / FQU10N20L N-Channel MOSFET April 2013 FQD10N20L / FQU10N20L N-Channel MOSFET 200 V, A, 360 This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. • A, 200 V, RDS on = 360 Max. VGS = 10 V, ID = A • Low Gate Charge Typ. 13 nC • Low Crss Typ. 14 pF • 100% Avalanche Tested • Low level gate drive requirement allowing direct operation from logic drivers D-PAK I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds FQD10N20L / FQU10N20L 200 ± 20 180 51 -55 to +150 Unit V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient, Max.

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FQD10N20L / FQU10N20L N-Channel MOSFET

April 2013

FQD10N20L / FQU10N20L

N-Channel MOSFET
200 V, A, 360

This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.
• A, 200 V, RDS on = 360 Max. VGS = 10 V, ID = A
• Low Gate Charge Typ. 13 nC
• Low Crss Typ. 14 pF
• 100% Avalanche Tested
• Low level gate drive requirement allowing direct
operation from logic drivers

D-PAK

I-PAK

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQD10N20L / FQU10N20L 200 ± 20 180 51
-55 to +150

Unit V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient, Max.

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Datasheet ID: FQU10N20LTU 515223