FQA90N10V2
FQA90N10V2 Datasheet
FQA90N10V2 100V N-Channel MOSFET
| Part | Datasheet |
|---|---|
FQA90N10V2 |
FQA90N10V2 (pdf) |
| PDF Datasheet Preview |
|---|
| FQA90N10V2 100V N-Channel MOSFET FQA90N10V2 100V N-Channel MOSFET • 105A, 100V, RDS on = = 10 V • Low gate charge typical 147 nC • Low Crss typical 300 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating October 2005 QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds on is required. Absolute Maximum Ratings TO-3P FQA Series VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQA90N10V2 100 105 78 420 ±30 2430 105 33 330 -55 to +175 300 Min. Max. Unit V A V mJ A mJ V/ns W/°C °C Package Marking and Ordering Information Device Marking AV290N10 Device FQA90N10V2 Package TO-3P Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V VDS = 80V, TC = 150°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 52.5A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 52.5A Note 4 -- Ciss Input Capacitance VDS = 25V, VGS = 0V, |
| More datasheets: M213204 SL002 | M213204 SL005 | M213204 SL001 | ATECC108-MAHDA-T | ATECC108-SSHCZ-B | ATECC108-RBHCZ-T | ATECC108-SSHDA-T | ATECC108-SSHCZ-T | ATECC108-SSHDA-B | ATECC108-MAHCZ-T |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQA90N10V2 Datasheet file may be downloaded here without warranties.