FQB8N60CFTM

FQB8N60CFTM Datasheet

FQB8N60CF 600V N-Channel MOSFET

Part	Datasheet
FQB8N60CFTM	FQB8N60CFTM (pdf)

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FQB8N60CF 600V N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET • 6.26A, 600V, RDS on = = 10 V • Low gate charge typical 28nC • Low Crss typical 12pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant October 2008 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D2-PAK FQB Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Note 1 Note 2 Note 1 Note 1 Note 3 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount 2008 Fairchild Semiconductor Corporation FQB8N60CF 600 25 ± 30 160 147 -55 to +150 Units V A V mJ A mJ V/ns W/°C °C FQB8N60CF Units °C/W °C/W °C/W FQB8N60CF 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking Device FQB8N60CF FQB8N60CFTM Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR On Characteristics VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.13A VDS = 40 V, ID = A Note 4 Ciss Input Capacitance Coss Output Capacitance Crss Switching Characteristics VDS = 25 V, VGS = 0 V, f = MHz

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FQB8N60CF 600V N-Channel MOSFET

FQB8N60CF
600V N-Channel MOSFET
• 6.26A, 600V, RDS on = = 10 V
• Low gate charge typical 28nC
• Low Crss typical 12pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

October 2008

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

D2-PAK

FQB Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

Note 1

Note 2 Note 1 Note 1 Note 3

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount
2008 Fairchild Semiconductor Corporation

FQB8N60CF
600 25 ± 30 160 147 -55 to +150

Units

V A V mJ A mJ V/ns W/°C °C

FQB8N60CF

Units
°C/W °C/W °C/W

FQB8N60CF 600V N-Channel MOSFET
Package Marking and Ordering Information

Device Marking

Device

FQB8N60CF

FQB8N60CFTM

Package

D2-PAK

Reel Size
330mm

Tape Width
24mm

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage Current, Forward

IGSSR

On Characteristics

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V

VGS th

Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.13A VDS = 40 V, ID = A

Note 4

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Switching Characteristics

VDS = 25 V, VGS = 0 V, f = MHz

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Datasheet ID: FQB8N60CFTM 515203