FDM3300NZ
FDM3300NZ Datasheet
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified MOSFET
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FDM3300NZ |
FDM3300NZ (pdf) |
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| FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified MOSFET January 2007 FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified MOSFET tm 20V, 10A, 23mΩ - Max rDS on = 23mΩ at VGS = 4.5V, ID = 10A - Max rDS on = 28mΩ at VGS = 2.5V, ID = 9A - >2000V ESD protection - Low Profile - 1mm maximum - in the new package MLP 3.3x3.3 mm This dual N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced process to optimize the rDS on VGS = 2.5V on special MLP lead frame with all the drains on one side of the package. - RoHS Compliant Application - Li-lon Battery Pack DD22 D2 D1 Power 33 G2 S2 G1 S1 D2 5 D2 6 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Steady State TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Rating 20 ±12 10 40 -55 to +150 Units V A W °C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b °C/W Device Marking 3300N Device FDM3300NZ Package Power 33 Reel Size 7” Tape Width 8mm Quantity 3000 units 2006 Fairchild Semiconductor Corporation FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250uA, VGS = 0V ID = 250uA, referenced to 25°C VDS = 16V, VGS = 0V VGS = ±12V, VDS= 0V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250uA ID = 250uA, referenced to 25°C VGS = 4.5V, ID = 10A VGS = 2.5V, ID = 9A VGS = 4.5V, ID = 10A, TJ = 125°C VDS = 5V, ID = 10A Dynamic Characteristics Ciss Coss Crss Rg VDS = 10V, VGS = 0V, f = 1MHZ f = 1MHz Switching Characteristics td on tr td off tf Qg Qgs Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = 10V, ID = 1.0A VGS = 4.5V, RGEN = |
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