2N7002V-TP
2N7002V-TP Datasheet
2N7002V
| Part | Datasheet |
|---|---|
2N7002V-TP |
2N7002V-TP (pdf) |
| PDF Datasheet Preview |
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| 20736 Marilla Street Chatsworth • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed Maximum Ratings 25OC Unless Otherwise Specified Rating Rating Unit VDSS VDGR VGSS Drain-source Voltage Drain-Gate Voltage Gate-source Voltage ±20 ID PD TJ Drain Current Total Power Dissipation Thermal Resistance Junction to Ambient Operating Junction Temperature 280 150 833 -55 to +150 mA mW ℃/W ℃ TSTG Storage Temperature -55 to +150 Electrical Characteristics 25OC Unless Otherwise Specified Parameter V BR DSS Vth GS IGSS IDSS Drain-Source Breakdown Voltage* VGS=0Vdc, ID=10µAdc Gate-Threshold Voltage* VDS=VGS, ID=250µAdc Gate-body Leakage* VDS =0Vdc, VGS =±20Vdc Zero Gate Voltage Drain Current* VDS =60Vdc, VGS =0Vdc VDS =0Vdc, VGS =±20Vdc, Tj=125℃ ID ON rDS on gFS Ciss COSS CrSS On-state Drain Current* VDS =7.5Vdc, VGS =10Vdc Drain-Source On-Resistance* VGS=5Vdc, ID=50mAdc VGS=10Vdc, ID=500mAdc Forward Tran Conductance* VDS=10Vdc, ID=200mAdc VDS=25Vdc, VGS =0Vdc f=1MHz Switching Min Typ Max Units 60 70 --- µAdc --- ----- --- |
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