TIPL760C-S

TIPL760C-S Datasheet

TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS

Part	Datasheet
TIPL760C-S	TIPL760C-S (pdf)

Related Parts	Information
TIPL760B-S	TIPL760B-S

PDF Datasheet Preview
TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING Collector-base voltage IE = 0 Collector-emitter voltage VBE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 10 ms, duty cycle TIPL760B TIPL760C TIPL760B TIPL760C TIPL760B TIPL760C VCBO VCES VCEO VEBO IC ICM Ptot Tj Tstg VALUE 1100 1200 1100 1200 500 550 10 4 8 75 -65 to +150 -65 to +150 UNIT V A W °C °C PRODUCT INFORMATION TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX Collector-emitter TIPL760B VCEO sus sustaining voltage IC = 10 mA L = 25 mH see Note 2 TIPL760C VCE = 1100 V VBE = 0 TIPL760B Collector-emitter ICES cut-off current VCE = 1200 V VCE = 1100 V VBE = 0 VBE = 0 TC = 100°C TIPL760C TIPL760B 50 200

PDF Datasheet Preview

TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS
● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed
at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRACA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

Collector-base voltage IE = 0

Collector-emitter voltage VBE = 0

Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 10 ms, duty cycle

TIPL760B TIPL760C TIPL760B TIPL760C TIPL760B TIPL760C

VCBO

VCES

VCEO VEBO

IC ICM Ptot Tj Tstg

VALUE
1100 1200 1100 1200 500 550
10 4 8 75 -65 to +150 -65 to +150

UNIT

V A W °C °C

PRODUCT INFORMATION

TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX

Collector-emitter

TIPL760B

VCEO sus sustaining voltage

IC = 10 mA L = 25 mH
see Note 2

TIPL760C

VCE = 1100 V VBE = 0

TIPL760B

Collector-emitter ICES cut-off current

VCE = 1200 V VCE = 1100 V

VBE = 0 VBE = 0

TC = 100°C

TIPL760C TIPL760B
50 200

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Datasheet ID: TIPL760C-S 522300