FDN372S

FDN372S Datasheet

FDN372S

Part	Datasheet
FDN372S	FDN372S (pdf)

PDF Datasheet Preview
FDN372S September 2002 FDN372S 30V N-Channel SyncFET The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds on and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter. • DC-DC Converter • Motor Drives • A, 30 V. RDS ON = 40 VGS = 10 V RDS ON = 50 VGS = V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS ON SuperSOTTM-3 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDN372S 7’’ Fairchild Semiconductor Corporation Ratings 30 ± 16 10 to +150 250 75 Tape width 8mm Units °C/W °C/W Quantity 3000 units FDN372S Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 1 mA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V mV/°C 500 µA IGSS Leakage VGS = ±16 V, VDS = 0 V ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on

PDF Datasheet Preview

FDN372S

September 2002

FDN372S
30V N-Channel SyncFET

The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds on and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter.
• DC-DC Converter
• Motor Drives
• A, 30 V.

RDS ON = 40 VGS = 10 V RDS ON = 50 VGS = V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS ON

SuperSOTTM-3

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDN372S
7’’

Fairchild Semiconductor Corporation

Ratings
30 ± 16 10 to +150
250 75

Tape width 8mm

Units
°C/W °C/W

Quantity 3000 units

FDN372S

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V,

ID = 1 mA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V
mV/°C
500 µA

IGSS

Leakage

VGS = ±16 V, VDS = 0 V
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDN372S Datasheet file may be downloaded here without warranties.

Datasheet ID: FDN372S 514235