FQB4P25 / FQI4P25
Part | Datasheet |
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FQB4P25TM (pdf) |
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FQB4P25 / FQI4P25 FQB4P25 / FQI4P25 250V P-Channel MOSFET December 2000 QFETTM These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. • -4.0A, -250V, RDS on = = -10 V • Low gate charge typical 10 nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount ● ● FQB4P25 / FQI4P25 -250 -16 ± 30 280 75 -55 to +150 |
More datasheets: 74ABT374CSC | 74ABT374CSCX | 74ABT374CMSAX | 74ABT374CSJ | 74ABT374CMTCX | 74ABT374CMTC | 74ABT374CPC | 41-00001 | 2994 | ATDH2080 |
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