FQI11P06TU
FQI11P06TU Datasheet
FQB11P06 / FQI11P06 P-Channel MOSFET
| Part | Datasheet |
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FQI11P06TU |
FQI11P06TU (pdf) |
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| FQB11P06 / FQI11P06 P-Channel MOSFET FQB11P06 / FQI11P06 P-Channel QFET MOSFET -60 V, A, 175 mΩ March 2013 This P-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • A, -60 V, RDS on = 175 mΩ Max = -10 V, ID = A • Low Gate Charge Typ. 13 nC • Low Crss Typ. 45 pF • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ● ● FQB11P06 / FQI11P06 -60 ± 25 160 53 -55 to +175 Unit V A V mJ A mJ V/ns W W/°C °C |
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