FDS9412
FDS9412 Datasheet
FDS9412
| Part | Datasheet |
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FDS9412 |
FDS9412 (pdf) |
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| FDS9412 April 2000 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss and high efficiency are needed. • A, 30 V. RDS ON = 22 VGS = 10 V RDS ON = 36 VGS = V • Very low gate charge. • High switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability in a widely used surface mount package. G SS SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS9412 FDS9412 13’’ 5 6 7 8 Ratings 30 ±20 24 -55 to +150 50 25 Tape width 12mm 4 3 2 1 Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS9412 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient |
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