FQAF8N80

FQAF8N80 Datasheet

FQAF8N80

Part	Datasheet
FQAF8N80	FQAF8N80 (pdf)

PDF Datasheet Preview
FQAF8N80 FQAF8N80 800V N-Channel MOSFET March 2001 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. • 5.9A, 800V, RDS on = = 10 V • Low gate charge typical 44 nC • Low Crss typical 20 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-3PF FQAF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQAF8N80 800 ± 30 850 107 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2001 Fairchild Semiconductor Corporation

PDF Datasheet Preview

FQAF8N80

FQAF8N80
800V N-Channel MOSFET

March 2001

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
• 5.9A, 800V, RDS on = = 10 V
• Low gate charge typical 44 nC
• Low Crss typical 20 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-3PF

FQAF Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FQAF8N80 800 ± 30 850 107
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2001 Fairchild Semiconductor Corporation

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQAF8N80 Datasheet file may be downloaded here without warranties.

Datasheet ID: FQAF8N80 515093