FQA8N80C

FQA8N80C Datasheet


FQA8N80C

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FQA8N80C FQA8N80C FQA8N80C (pdf)
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FQA8N80C

FQA8N80C
800V N-Channel MOSFET

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
• 8.4A, 800V, RDS on = = 10 V
• Low gate charge typical 35 nC
• Low Crss typical 13 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-3P

FQA Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

FQA8N80C 800 ± 30 850 22 220
-55 to +150
2003 Fairchild Semiconductor Corporation

Units V A V mJ A mJ

V/ns W

W/°C °C °C

Units °C/W °C/W °C/W

FQA8N80C
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Datasheet ID: FQA8N80C 515054