FQA24N50F_F109

FQA24N50F_F109 Datasheet


FQA24N50F

Part Datasheet
FQA24N50F_F109 FQA24N50F_F109 FQA24N50F_F109 (pdf)
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FQA24N50F FQA24N50F FQA24N50F
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FQA24N50F

FQA24N50F
500V N-Channel MOSFET

September 2001

FRFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, where the body diode is used such as phase-shift ZVS, basic full-bridge topology.
• 24A, 500V, RDS on = = 10 V
• Low gate charge typical 90 nC
• Low Crss typical 55 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode max, 250ns

TO-3PN

FQA Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQA24N50F 500 24 96 ± 30 1100 24 29 15 290
-55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W °C/W
2001 Fairchild Semiconductor Corporation

FQA24N50F
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Datasheet ID: FQA24N50F_F109 515016