2N6076_D27Z
2N6076_D27Z Datasheet
2N6076 PNP Small Signal Transistor
| Part | Datasheet |
|---|---|
2N6076_D27Z |
2N6076_D27Z (pdf) |
| Related Parts | Information |
|---|---|
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2N6076_D75Z |
2N6076_D75Z |
|
2N6076_D26Z |
2N6076_D26Z |
|
2N6076 |
2N6076 |
| PDF Datasheet Preview |
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| 2N6076 PNP Small Signal Transistor 2N6076 PNP Small Signal Transistor • BVceo .....25V Min • hFE 100 Min Vce=10V, Ic=10mA • Pb free July 2008 Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Junction Temperature TSTG Storage Temperature Range -55 ~ 150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25qC unless otherwise noted Parameter Collector Power Dissipation, by RTJA RTJA Thermal Resistance, Junction to Ambient * These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings are based on a maximum junction temperature of 150 degrees C. Minimum land pad. Unit V mA qC Unit mW qC/W Electrical Characteristics* Ta=25qC unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current ICES Collector Cut-off Current IEBO Emitter Cut-off Current DC Current Gain VCE sat |
| More datasheets: AS1905C26-T | AS1906C26-T | AS1905C23-T | AS1906C23-T | AS1905C31-T | AS1904C26-T | AS1906C28-T | AS1904C31-T | AS1906C31-T | 2N6076_D75Z |
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