FMS6G20US60 Compact & Complex Module
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FMS6G20US60 Compact & Complex Module August 2005 FMS6G20US60 Compact & Complex Module • Short Circuit Rated 10µs TC = 100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 20A • High Input Impedance • Built-in 3 Phase Rectifier Circuit • Fast & Soft Anti-Parallel FWD • Built-in NTC Thermistor Application • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Package Code 25PM-AA 45 21 Internal Circuit Diagram 2005 Fairchild Semiconductor Corporation FMS6G20US60 Compact & Complex Module Absolute Maximum Ratings TC = 25°C unless otherwise noted Inverter Converter VCES VGES IC ICM 1 IF IFM PD TSC VRRM IO IFSM Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current TC = 80°C Diode Continuous Forward Current TC = 80°C Diode Maximum Forward Current TC = 25°C TC = 100°C Average Output Rectified Current Surge Forward Current 1Cycle at 60Hz, Peak value Non-Repetitive Energy pulse 1Cycle at 60Hz Common TSTG VISO Mounting Torque Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw AC 1minute M4 Notes 1 Repetitive rating Pulse width limited by max. junction temperature Package Marking and Ordering Information Device Marking FMS6G20US60 Device FMS6G20US60 Package 25PM-AA Reel Size 2 TMC2 Relibility test was done under -45°C ~ 125°C FMS6G20US60 600 ± 20 40 20 40 89 10 1600 20 200 164 -40 to +150 -40 to +125 2500 Tape Width Units V A W µs V A A2s °C °C V N•m Quantity FMS6G20US60 Compact & Complex Module Electrical Characteristics of IGBT Inverter TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250µA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th VCE sat Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff td on tr td off tf Eon Eoff Tsc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge |
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