FJV4106RMTF
FJV4106RMTF Datasheet
FJV4106R
| Part | Datasheet |
|---|---|
FJV4106RMTF |
FJV4106RMTF (pdf) |
| PDF Datasheet Preview |
|---|
| FJV4106R FJV4106R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJV3106R Marking PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1.0MHz fT VI off VI on R1/R2 Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -1mA 2 1 SOT-23 Base Emitter Collector Equivalent Circuit C Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V mA mW °C °C Min. Typ. Max. Units 2002 Fairchild Semiconductor Corporation FJV4106R Typical Characteristics hFE, DC CURRENT GAIN 1000 VCE = - 5V R1 = 10K R2 = 47K -100 IC[mA], COLLECTOR CURRENT Figure DC current Gain -10k V = - 5V CE R = 10K 1 R = 47K 2 -100 V off [V], INPUT OFF VOLTAGE I |
| More datasheets: HG-8002JA 40.0000M-PHCX | HG-8002JA 12.0000M-PCAVL3:ROHS | HG-8002JA 40.0000M-PCCXL3:ROHS | UP2-DEVKIT/UNIV | 12018 | 2N5306 | 2N5306_D74Z | 2254 | BCM5324MKPBG | GPF19.0W |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJV4106RMTF Datasheet file may be downloaded here without warranties.