FJV3107RMTF
FJV3107RMTF Datasheet
FJV3107R
| Part | Datasheet |
|---|---|
FJV3107RMTF |
FJV3107RMTF (pdf) |
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| FJV3107R FJV3107R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJV4107R Marking NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1MHz fT VI off VI on R1/R2 Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=2mA 2 1 SOT-23 Base Emitter Collector Equivalent Circuit C Value 50 10 100 200 150 -55 ~ 150 Units V mA mW °C °C Min. 50 68 Typ. 250 22 Max. Units V µA 2002 Fairchild Semiconductor Corporation FJV3107R Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = 5V R1 = 22K R2 = 47K IC[mA], COLLECTOR CURRENT Figure DC current Gain VCE = 5V R = 22K R = 47K 2 VI off [V], INPUT OFF VOLTAGE |
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