FJP3835TU

FJP3835TU Datasheet


FJP3835

Part Datasheet
FJP3835TU FJP3835TU FJP3835TU (pdf)
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FJP3835

FJP3835

Power Amplifier
• High Current Capability IC=8A
• High Power Dissipation
• Wide S.O.A

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature

TO-220
1.Base 2.Collector 3.Emitter

Value 200 120
8 16 50 150 - 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO

Collector-Base Breakdown Voltage

BVCEO

Collector-Emitter Breakdown Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current
* DC Current Gain

VCE sat

Collector-Emitter Saturation Voltage

VBE sat

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Turn On Time

Fall Time
tSTG

Storage Time
* Pulse Test PW=20µs

IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2

Min. 200 120
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Datasheet ID: FJP3835TU 514782