FJP3835TU
FJP3835TU Datasheet
FJP3835
| Part | Datasheet |
|---|---|
FJP3835TU |
FJP3835TU (pdf) |
| PDF Datasheet Preview |
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| FJP3835 FJP3835 Power Amplifier • High Current Capability IC=8A • High Power Dissipation • Wide S.O.A NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature TO-220 1.Base 2.Collector 3.Emitter Value 200 120 8 16 50 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current * DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time tSTG Storage Time * Pulse Test PW=20µs IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 Min. 200 120 |
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