BU806/807
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BU806 (pdf) |
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BU807 |
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BU807TU |
PDF Datasheet Preview |
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BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage BU806 BU807 VCEO Collector-Emitter Voltage BU806 BU807 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition VCEO sus * Collector-Emitter Sustaining Voltage BU806 BU807 IC = 100mA, IB = 0 ICES Collector Cut-off Current BU806 BU807 ICEV Collector Cut-off Current BU806 BU807 IEBO Emitter Cut-off Current VCE sat * Collector-Emitter Saturation Voltage VBE sat * Base-Emitter Saturation Voltage * Damper Diode Forward Voltage * Pulsed duration = 300µs, duty cycle = VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V VBE = 6V, IC = 0 IC = 5A, IB = 50mA IC = 5A, IB = 50mA IF = 4A Value 400 330 200 150 6 8 15 2 60 150 - 55 ~150 |
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