FJNS4212RBU
FJNS4212RBU Datasheet
FJNS4212R
| Part | Datasheet |
|---|---|
FJNS4212RBU |
FJNS4212RBU (pdf) |
| Related Parts | Information |
|---|---|
FJNS4212RTA |
FJNS4212RTA |
| PDF Datasheet Preview |
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| FJNS4212R FJNS4212R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS3212R TO-92S 1.Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 ICBO Collector Cut-off Current VCB= -30V, IE=0 DC Current Gain VCE= -5V, IC= -1mA VCE sat Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA Output Capacitance VCB= -10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE= -10V, IC= -5mA Input Resistor Equivalent Circuit C Typ. 200 47 Max. Units V µA 2002 Fairchild Semiconductor Corporation |
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