FJNS3214RBU

FJNS3214RBU Datasheet

FJNS3214R

Part	Datasheet
FJNS3214RBU	FJNS3214RBU (pdf)

Related Parts	Information
FJNS3214RTA	FJNS3214RTA

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FJNS3214R FJNS3214R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1 • Complement to FJNS4214R TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE=5V, IC=100µA VCE=0.2V, IC=5mA Min. 50 68 Typ. Max. Units V µA V MHz pF V 2002 Fairchild Semiconductor Corporation FJNS3214R Package Dimensions TO-92S MAX. 1.27TYP 1.27TYP 2002 Fairchild Semiconductor Corporation Dimensions in Millimeters TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx

PDF Datasheet Preview

FJNS3214R

FJNS3214R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor R1
• Complement to FJNS4214R

TO-92S
1.Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-55 ~ 150

Equivalent Circuit

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz

VI off VI on R1/R2

Input Off Voltage Input On Voltage Input Resistor Ratio

VCE=5V, IC=100µA VCE=0.2V, IC=5mA

Min. 50 68

Typ.

Max.

Units V µA V

MHz pF V
2002 Fairchild Semiconductor Corporation

FJNS3214R

Package Dimensions

TO-92S

MAX.
1.27TYP
1.27TYP
2002 Fairchild Semiconductor Corporation

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx

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Datasheet ID: FJNS3214RBU 514763