FJN3312RTA
FJN3312RTA Datasheet
FJN3312R
| Part | Datasheet |
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FJN3312RTA |
FJN3312RTA (pdf) |
| Related Parts | Information |
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FJN3312RBU |
FJN3312RBU |
| PDF Datasheet Preview |
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| FJN3312R FJN3312R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJN4312R TO-92 Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Min. BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IE=1mA, IB=0 ICBO Collector Cut-off Current VCB=30V, IE=0 DC Current Gain VCE=5V, IC=1mA VCE sat Collector-Emitter Saturation Voltage IC=10mA, IB=1mA Output Capacitance VCB=10V, IE=0 f=1MHz Current Gain Bandwidth Product VCE=10V, IC=5mA Input Resistor Equivalent Circuit C Typ. 250 47 Max. Units V µA 2002 Fairchild Semiconductor Corporation FJN3312R |
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