FJN3302RBU

FJN3302RBU Datasheet

FJN3302R NPN Epitaxial Silicon Transistor with Bias Resistor

Part	Datasheet
FJN3302RBU	FJN3302RBU (pdf)

PDF Datasheet Preview
FJN3302R NPN Epitaxial Silicon Transistor with Bias Resistor November 2013 FJN3302R NPN Epitaxial Silicon Transistor with Bias Resistor • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Switching, Interface, and Driver Circuits • Inverters • Digital Applications in Industrial Segments TO-92 Emitter Collector Base Ordering Information Part Number FJN3302RTA Top Mark R3302 Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Equivalent Circuit Package TO-92 3L Packing Method Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Parameter Value Unit VCBO VCEO VEBO IC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature -55 to 150 2002 Fairchild Semiconductor Corporation FJN3302R NPN Epitaxial Silicon Transistor with Bias Resistor Thermal Characteristics 1 Values are at TA = 25°C unless otherwise noted. Parameter Value Power Dissipation Derate Above TA = 25°C Thermal Resistance, Junction to Ambient Note: PCB size FR-4 76 x 114 x 0.6T mm3 inch x inch x inch with minimum land pattern size. Unit mW/°C °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Parameter BVCBO BVCEO ICBO hFE VCE sat fT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance VI off VI on R1/R2 Input-Off Voltage Input-On Voltage Input Resistor Ratio Conditions IC = 10 uA, IE = 0 IC = 100 uA, IB = 0 VCB = 40 V, IE = 0 VCE = 5 V, IC = 5 mA IC = 10 mA, IB = mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = MHz VCE = 5 V, IC = 100 uA VCE = V, IC = 10 mA

PDF Datasheet Preview

FJN3302R NPN Epitaxial Silicon Transistor with Bias Resistor

November 2013

FJN3302R NPN Epitaxial Silicon Transistor with Bias Resistor
• 100 mA Output Current Capability
• Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ
• Switching, Interface, and Driver Circuits
• Inverters
• Digital Applications in Industrial Segments

TO-92

Emitter Collector Base
Ordering Information

Part Number FJN3302RTA

Top Mark R3302

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Equivalent Circuit

Package TO-92 3L

Packing Method Ammo

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Parameter

Value

Unit

VCBO VCEO VEBO

IC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature
-55 to 150
2002 Fairchild Semiconductor Corporation

FJN3302R NPN Epitaxial Silicon Transistor with Bias Resistor

Thermal Characteristics 1

Values are at TA = 25°C unless otherwise noted.

Parameter

Value

Power Dissipation

Derate Above TA = 25°C

Thermal Resistance, Junction to Ambient

Note:

PCB size FR-4 76 x 114 x 0.6T mm3 inch x inch x inch with minimum land pattern size.

Unit mW/°C °C/W

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Parameter

BVCBO BVCEO

ICBO hFE VCE sat fT

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product

Output Capacitance

VI off VI on

R1/R2

Input-Off Voltage Input-On Voltage Input Resistor Ratio

Conditions

IC = 10 uA, IE = 0 IC = 100 uA, IB = 0 VCB = 40 V, IE = 0 VCE = 5 V, IC = 5 mA IC = 10 mA, IB = mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = MHz

VCE = 5 V, IC = 100 uA VCE = V, IC = 10 mA

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJN3302RBU Datasheet file may be downloaded here without warranties.

Datasheet ID: FJN3302RBU 514721