FGPF30N30DTU

FGPF30N30DTU Datasheet

FGPF30N30D 300V, 30A PDP IGBT

Part	Datasheet
FGPF30N30DTU	FGPF30N30DTU (pdf)

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FGPF30N30D 300V, 30A PDP IGBT FGPF30N30D 300V, 30A PDP IGBT • High Current Capability • Low saturation voltage VCE sat =1.4V IC = 20A • High Input Impedance • Fast switching • RoHS Complaint Application PDP System April 2007 Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential. TO-220F 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES IC pulse 1 IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 100°C TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Notes 1 Repetitive test , pluse width = 100usec , Duty = * Ic_pluse limited by max Tj FGPF30N30D 300 ± 30 80 10 40 46 -55 to +150 -55 to +150 Typ. ---- Max. Units V A W oC Units oC/W °C/W oC/W 2006 Fairchild Semiconductor Corporation FGPF30N30D 300V, 30A PDP IGBT Package Marking and Ordering Information Device Marking Device FGPF30N30D FGFP30N30DTU Package TO-220F Packaging Type Rail / Tube Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC =10A, VGE = 15V IC =20A, VGE = 15V IC = 30A, VGE = 15V TC = 25oC IC = 30A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200 V, IC = 20A RG = VGE = 15V Resistive Load, TC = 25oC VCC = 200 V, IC = 20A RG = VGE = 15V Resistive Load, TC = 125oC VCE = 200 V, IC = 20A VGE = 15V Qty per Tube 50ea Max Qty per Box Min. Typ. Max. Units

PDF Datasheet Preview

FGPF30N30D 300V, 30A PDP IGBT

FGPF30N30D
300V, 30A PDP IGBT
• High Current Capability
• Low saturation voltage VCE sat =1.4V IC = 20A
• High Input Impedance
• Fast switching
• RoHS Complaint

Application

PDP System

April 2007

Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential.

TO-220F 1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

VCES VGES IC pulse 1 IF IFM PD

TJ Tstg TL

Collector-Emitter Voltage

Gate-Emitter Voltage Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25oC TC = 100°C

TC = 25oC TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient

Notes 1 Repetitive test , pluse width = 100usec , Duty = * Ic_pluse limited by max Tj

FGPF30N30D
300 ± 30 80 10 40 46 -55 to +150 -55 to +150

Typ.
----

Max.

Units

V A W oC

Units
oC/W °C/W oC/W
2006 Fairchild Semiconductor Corporation

FGPF30N30D 300V, 30A PDP IGBT
Package Marking and Ordering Information

Device Marking

Device

FGPF30N30D

FGFP30N30DTU

Package

TO-220F

Packaging Type

Rail / Tube

Electrical Characteristics TC = 25oC unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES

Collector-Emitter Breakdown Voltage

ICES

IGES

Temperature Coefficient of Breakdown Voltage

Collector Cut-Off Current

G-E Leakage Current

VGE = 0V, IC = 250uA

VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat Collector to Emitter Saturation Voltage

IC = 250uA, VCE = VGE

IC =10A, VGE = 15V IC =20A, VGE = 15V IC = 30A, VGE = 15V TC = 25oC IC = 30A, VGE = 15V TC = 125oC

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V f = 1MHz

Switching Characteristics
td on tr td off tf td on tr td off tf Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

VCC = 200 V, IC = 20A RG = VGE = 15V Resistive Load, TC = 25oC

VCC = 200 V, IC = 20A RG = VGE = 15V Resistive Load, TC = 125oC

VCE = 200 V, IC = 20A VGE = 15V

Qty per Tube
50ea

Max Qty per Box

Min. Typ. Max. Units

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Datasheet ID: FGPF30N30DTU 514637