FGH60N6S2

FGH60N6S2 Datasheet

FGH60N6S2

Part	Datasheet
FGH60N6S2	FGH60N6S2 (pdf)

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FGH60N6S2 August 2003 FGH60N6S2 600V, SMPS II Series N-Channel IGBT The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction PFC circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits Formerly Developmental Type TA49346. Features • 100kHz Operation at 390V, 52A • 200kHZ Operation at 390V, 31A • 600V Switching SOA Capability • Typical Fall Time. 77ns at TJ = 125oC • Low Gate Charge 140nC at VGE = 15V • Low Plateau Voltage .6.5V Typical • UIS Rated 700mJ • Low Conduction Loss Package TO-247 COLLECTOR Back-Metal Device Maximum Ratings TC= 25°C unless otherwise noted Parameter Ratings Units BVCES Collector to Emitter Breakdown Voltage IC25 Collector Current Continuous, TC = 25°C IC110 Collector Current Continuous, TC = 110°C Collector Current Pulsed Note 1 VGES Gate to Emitter Voltage Continuous ±20 VGEM Gate to Emitter Voltage Pulsed ±30 SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 200A at 600V Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C W/°C Operating Junction Temperature Range -55 to 150 TSTG Storage Junction Temperature Range -55 to 150 CAUTION Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: Pulse width limited by maximum junction temperature. Package Marking and Ordering Information Device Marking 60N6S2 Device FGH60N6S2 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 BVECS Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C TJ = 125°C - IGES Gate to Emitter Leakage Current VGE = ± 20V ±250 nA On State Characteristics VCE SAT Collector to Emitter Saturation Voltage IC = 40A, TJ = 25°C VGE = 15V TJ = 125°C Dynamic Characteristics QG ON Gate Charge VGE TH VGEP Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 40A, VGE = 15V VCE = 300V VGE = 20V IC = 250µA, VCE = VGE IC = 40A, VCE = 300V Switching Characteristics SSOA Switching SOA td ON I trI td OFF I tfI EON1 EON2 EOFF td ON I trI td OFF I tfI EON1 EON2 EOFF Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Note 2 Turn-On Energy Note 2 Turn-Off Energy Note 3 Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Note 2 Turn-On Energy Note 2 Turn-Off Energy Note 3

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FGH60N6S2

August 2003

FGH60N6S2
600V, SMPS II Series N-Channel IGBT

The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction PFC circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits

Formerly Developmental Type TA49346.

Features
• 100kHz Operation at 390V, 52A
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. 77ns at TJ = 125oC
• Low Gate Charge 140nC at VGE = 15V
• Low Plateau Voltage .6.5V Typical
• UIS Rated 700mJ
• Low Conduction Loss

Package

TO-247

COLLECTOR

Back-Metal

Device Maximum Ratings TC= 25°C unless otherwise noted

Parameter

Ratings

Units

BVCES Collector to Emitter Breakdown Voltage

IC25

Collector Current Continuous, TC = 25°C

IC110

Collector Current Continuous, TC = 110°C

Collector Current Pulsed Note 1

VGES

Gate to Emitter Voltage Continuous
±20

VGEM Gate to Emitter Voltage Pulsed
±30

SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
200A at 600V

Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V

Power Dissipation Total TC = 25°C

Power Dissipation Derating TC > 25°C

W/°C

Operating Junction Temperature Range
-55 to 150

TSTG

Storage Junction Temperature Range
-55 to 150

CAUTION Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

Pulse width limited by maximum junction temperature.
Package Marking and Ordering Information

Device Marking 60N6S2

Device FGH60N6S2

Package TO-247

Reel Size Tube

Tape Width N/A

Quantity 30

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off State Characteristics

BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0

BVECS Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0

ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C

TJ = 125°C -

IGES Gate to Emitter Leakage Current

VGE = ± 20V
±250 nA

On State Characteristics

VCE SAT Collector to Emitter Saturation Voltage IC = 40A,

TJ = 25°C

VGE = 15V

TJ = 125°C

Dynamic Characteristics

QG ON Gate Charge

VGE TH VGEP

Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage

IC = 40A,

VGE = 15V

VCE = 300V VGE = 20V

IC = 250µA, VCE = VGE

IC = 40A, VCE = 300V

Switching Characteristics

SSOA Switching SOA
td ON I trI
td OFF I tfI

EON1 EON2 EOFF td ON I
trI td OFF I
tfI EON1 EON2 EOFF

Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Note 2 Turn-On Energy Note 2 Turn-Off Energy Note 3 Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Note 2 Turn-On Energy Note 2 Turn-Off Energy Note 3

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Datasheet ID: FGH60N6S2 514627