FJY4008R

FJY4008R Datasheet


FJY4008R PNP Epitaxial Silicon Transistor

Part Datasheet
FJY4008R FJY4008R FJY4008R (pdf)
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FJY4008R PNP Epitaxial Silicon Transistor

FJY4008R

PNP Epitaxial Silicon Transistor
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJY3008R

July 2007

E B SOT - 523F

Equivalent Circuit

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

Collector Current

TSTG

Storage Temperature Range

Junction Temperature

Collector Power Dissipation, by
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Value
-50 -50 -10 -100 -55~150 200

Thermal Characteristics* Ta=25°C unless otherwise noted

Parameter

Thermal Resistance, Junction to Ambient
* Minimum land pad size.

Electrical Characteristics* TC = 25°C unless otherwise noted

Parameter

Test Condition

V BR CBO

Collector-Base Breakdown Voltage

IC = -10 uA, IE = 0

V BR CEO

Collector-Emitter Breakdown Voltage IC = -100 uA, IB = 0

ICBO

Collector-Cutoff Current

VCB = -40 V, IE = 0

DC Current Gain

VCE = -5 V, IC = -5mA

VCE sat
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Datasheet ID: FJY4008R 514852