FGH40N6S2

FGH40N6S2 Datasheet


FGH40N6S2 / FGP40N6S2 / FGB40N6S2

Part Datasheet
FGH40N6S2 FGH40N6S2 FGH40N6S2 (pdf)
Related Parts Information
FGB40N6S2 FGB40N6S2 FGB40N6S2
FGB40N6S2T FGB40N6S2T FGB40N6S2T
FGP40N6S2 FGP40N6S2 FGP40N6S2
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FGH40N6S2 / FGP40N6S2 / FGB40N6S2

August 2003

FGH40N6S2 / FGP40N6S2 / FGB40N6S2
600V, SMPS II Series N-Channel IGBT

The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction PFC circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits

IGBT co-pack formerly Developmental Type TA49438

Features
• 100kHz Operation at 390V, 24A
• 200kHZ Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. 85ns at TJ = 125oC
• Low Gate Charge 35nC at VGE = 15V
• Low Plateau Voltage .6.5V Typical
• UIS Rated 260mJ
• Low Conduction Loss

Package

TO-247

TO-220AB

TO-263AB

COLLECTOR Back-Metal

COLLECTOR

Flange

Device Maximum Ratings TC= 25°C unless otherwise noted

Parameter

Ratings

Units

BVCES Collector to Emitter Breakdown Voltage

IC25

Collector Current Continuous, TC = 25°C

IC110

Collector Current Continuous, TC = 110°C

Collector Current Pulsed Note 1

VGES

Gate to Emitter Voltage Continuous
±20

VGEM Gate to Emitter Voltage Pulsed
±30

SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
100A at 600V

Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V

Power Dissipation Total TC = 25°C

Power Dissipation Derating TC > 25°C

W/°C

Operating Junction Temperature Range
-55 to 150

TSTG

Storage Junction Temperature Range
-55 to 150
Package Marking and Ordering Information

Device Marking 40N6S2

Device FGH40N6S2 FGP40N6S2 FGB40N6S2 FGB40N6S2T

Package TO-247 TO-220AB TO-263AB TO-263AB

Reel Size Tube
330mm

Tape Width N/A N/A N/A
24mm

Quantity 30 50 800

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off State Characteristics

BVCES BVECS

ICES

IGES

Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0

Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0

Collector to Emitter Leakage Current VCE = 600V TJ = 25°C

TJ = 125°C

Gate to Emitter Leakage Current

VGE = ± 20V
±250 nA

On State Characteristics

VCE SAT Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V

TJ = 25°C TJ = 125°C

Dynamic Characteristics

QG ON Gate Charge

VGE TH Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage

IC = 20A, VCE = 300V

VGE = 15V VGE = 20V

IC = 250µA, VCE = VGE

IC = 20A, VCE = 300V

Switching Characteristics

SSOA Switching SOA
td ON I trI
td OFF I tfI

EON1 EON2 EOFF td ON I
trI td OFF I
tfI EON1 EON2 EOFF
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Datasheet ID: FGH40N6S2 514617