FGB40N6S2
FGB40N6S2 Datasheet
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
| Part | Datasheet |
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FGB40N6S2 |
FGB40N6S2 (pdf) |
| Related Parts | Information |
|---|---|
FGH40N6S2 |
FGH40N6S2 |
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FGB40N6S2T |
FGB40N6S2T |
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FGP40N6S2 |
FGP40N6S2 |
| PDF Datasheet Preview |
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| FGH40N6S2 / FGP40N6S2 / FGB40N6S2 August 2003 FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction PFC circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits IGBT co-pack formerly Developmental Type TA49438 Features • 100kHz Operation at 390V, 24A • 200kHZ Operation at 390V, 18A • 600V Switching SOA Capability • Typical Fall Time. 85ns at TJ = 125oC • Low Gate Charge 35nC at VGE = 15V • Low Plateau Voltage .6.5V Typical • UIS Rated 260mJ • Low Conduction Loss Package TO-247 TO-220AB TO-263AB COLLECTOR Back-Metal COLLECTOR Flange Device Maximum Ratings TC= 25°C unless otherwise noted Parameter Ratings Units BVCES Collector to Emitter Breakdown Voltage IC25 Collector Current Continuous, TC = 25°C IC110 Collector Current Continuous, TC = 110°C Collector Current Pulsed Note 1 VGES Gate to Emitter Voltage Continuous ±20 VGEM Gate to Emitter Voltage Pulsed ±30 SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 100A at 600V Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C W/°C Operating Junction Temperature Range -55 to 150 TSTG Storage Junction Temperature Range -55 to 150 Package Marking and Ordering Information Device Marking 40N6S2 Device FGH40N6S2 FGP40N6S2 FGB40N6S2 FGB40N6S2T Package TO-247 TO-220AB TO-263AB TO-263AB Reel Size Tube 330mm Tape Width N/A N/A N/A 24mm Quantity 30 50 800 Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES BVECS ICES IGES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 Collector to Emitter Leakage Current VCE = 600V TJ = 25°C TJ = 125°C Gate to Emitter Leakage Current VGE = ± 20V ±250 nA On State Characteristics VCE SAT Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V TJ = 25°C TJ = 125°C Dynamic Characteristics QG ON Gate Charge VGE TH Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage IC = 20A, VCE = 300V VGE = 15V VGE = 20V IC = 250µA, VCE = VGE IC = 20A, VCE = 300V Switching Characteristics SSOA Switching SOA td ON I trI td OFF I tfI EON1 EON2 EOFF td ON I trI td OFF I tfI EON1 EON2 EOFF |
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