FFPF60SB60DS
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FFPF60SB60DSTU (pdf) |
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FFPF60SB60DS FFPF60SB60DS • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits March 2008 STEALTHTM II Rectifier 4A, 600V STEALTHTM II Rectifier The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. TO220F Cathode Anode Cathode Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM VRWM VR IF AV IFSM Parameter DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TC = 100oC TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case Package Marking and Ordering Information Device Marking Device Package FFPF60SB60DS FFPF60SB60DSTU TO220F Reel Size Ratings 600 4 -65 to +150 Units V A Ratings Units oC/W Tape Width Quantity 2008 Fairchild Semiconductor Corporation FFPF60SB60DS Electrical Characteristics TC = 25oC unless otherwise noted Parameter VFM1 IF = 4A IF = 4A IRM1 VR = 600V VR = 600V IF = 1A, di/dt = 100A/µs, VR = 30V trr Irr S factor IF = 4A, di/dt = 200A/µs, VR = 390V trr Irr S factor IF = 4A, di/dt = 200A/µs, VR = 390V WAVL Avalanche Energy L = 40mH Notes 1 Pulse Test Pulse width = 300µs, Duty Cycle = 2% TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 25oC TC = 125oC Test Circuit and Waveforms Min. Typ. Max. Units 100 500 Typical Performance Characteristics Figure Typical Forward Voltage Drop vs. Forward Current TC = 125oC |
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