FF1N30HS60DD

FF1N30HS60DD Datasheet

FF1N30HS60DD

Part	Datasheet
FF1N30HS60DD	FF1N30HS60DD (pdf)

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FF1N30HS60DD May 2003 FF1N30HS60DD 30A, 600V Stealth Diode This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM REC and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49411. • Switch Mode Power Supplies • Hard Switched CCM PFC Boost Diode • UPS and Motor Drive Free Wheeling Diode • SMPS FWD • Snubber Diode Package JEDEC SOT-227 Device Maximum Ratings per diode TC = 25°C unless otherwise noted Parameter Ratings Units VRRM VRWM VR IF AV IFRM IFSM PD EAVL TJ, TSTG Md 600 30 70 325 136 20 -55 to 175 V A W mJ °C Nm/lb.in. Nm/lb.in. TL TPKG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Techbrief TB334 CAUTION Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2003 Fairchild Semiconductor Corporation FF1N30HS60DD Package Marking and Ordering Information Device Marking FF1N30HS60DD Device FF1N30HS60DD Package SOT-227 Tape Width - Quantity 10 Electrical Characteristics per diode TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics VR = 600V TC = 25°C TC = 125°C - 100 µA On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25°C TC = 125°C - V - V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A - 120 - Switching Characteristics trr IRM REC QRR trr S IRM REC QRR trr S IRM REC QRR dIM/dt IF = 1A, dIF/dt = 100A/µs, VR = 30V IF = 30A, dIF/dt = 100A/µs, VR = 30V IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C IF = 30A, dIF/dt = 1000A/µs, VR = 390V, TC = 125°C - 27 35 ns - 36 45 ns - 110 - - 450 - 800 - A/µs Thermal Characteristics Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SOT-227 °C/W 12 °C/W

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FF1N30HS60DD

May 2003

FF1N30HS60DD
30A, 600V Stealth Diode

This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM REC and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49411.
• Switch Mode Power Supplies
• Hard Switched CCM PFC Boost Diode
• UPS and Motor Drive Free Wheeling Diode
• SMPS FWD
• Snubber Diode

Package

JEDEC SOT-227

Device Maximum Ratings per diode TC = 25°C unless otherwise noted

Parameter

Ratings

Units

VRRM VRWM

VR IF AV IFRM IFSM

PD EAVL TJ, TSTG Md
600 30 70 325 136 20 -55 to 175

V A W mJ °C Nm/lb.in. Nm/lb.in.

TL TPKG

Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Techbrief TB334

CAUTION Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2003 Fairchild Semiconductor Corporation

FF1N30HS60DD
Package Marking and Ordering Information

Device Marking FF1N30HS60DD

Device FF1N30HS60DD

Package SOT-227

Tape Width -

Quantity 10

Electrical Characteristics per diode TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off State Characteristics

VR = 600V

TC = 25°C TC = 125°C
- 100 µA

On State Characteristics

VF Instantaneous Forward Voltage

IF = 30A

TC = 25°C TC = 125°C
- V - V

Dynamic Characteristics

CJ Junction Capacitance

VR = 10V, IF = 0A
- 120 -

Switching Characteristics
trr IRM REC

QRR trr S

IRM REC QRR trr S

IRM REC QRR dIM/dt

IF = 1A, dIF/dt = 100A/µs, VR = 30V IF = 30A, dIF/dt = 100A/µs, VR = 30V

IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C

IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C

IF = 30A, dIF/dt = 1000A/µs, VR = 390V, TC = 125°C
- 27 35 ns
- 36 45 ns
- 110 -
- 450
- 800 - A/µs

Thermal Characteristics

Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SOT-227
°C/W
12 °C/W

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Datasheet ID: FF1N30HS60DD 514476