CDBHD1100L-G
CDBHD1100L-G Datasheet
CDBHD120L-G Thru 1100L-G
| Part | Datasheet |
|---|---|
CDBHD1100L-G |
CDBHD1100L-G (pdf) |
| Related Parts | Information |
|---|---|
CDBHD140L-G |
CDBHD140L-G |
CDBHD160L-G |
CDBHD160L-G |
| PDF Datasheet Preview |
|---|
| Low VF Schottky Bridge Rectifiers COMCHIP SMD DIODE SPECIALIST CDBHD120L-G Thru 1100L-G • Low Vf Schottky barrier chips in bridge • Metal-Semiconductor junction with guard ring • High surge current capability • Silicon epitaxial planar chips ~ • For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications • Lead-free part, meet RoHS requirements Mini-DIP Max. Mechanical Data • Case Mini-Dip bridge TO-269AA plastic molded case • Epoxy UL94-V0 rated flame retardant • Terminals Solderable per MIL-STD-750 Method 2026 • Polarity As marked on body • Mounting Position Any • Weight ounces, grams Max. MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified CDBHD - Symbols 120L 140L 160L 180L Unit :inch mm 1100L Units VRRM 80 100 Volts Maximum RMS Voltage VRMS 70 Volts Maximum DC Blocking Voltage 20 40 60 80 100 Volts Maximum Average Forward Rectified Current 0.2x0.2” 5.0x5.0mm copper pad area, see Figure 1 Peak Forward Surge Current 8.3mS single half sine-wave superimp osed on rated load JEDEC Me thod Maximum Forward Voltage at 1.0A Note 1 IAV IFSM TA= 25°C TA= 100°C Amps Amps Volts mA Typical Junction Capacitance Note 2 Typical Thermal Resistance Note 3 °C/W Operating Junction Temperature Range |
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