AON6718L_101
AON6718L_101 Datasheet
AON6718L 30V N-Channel MOSFET
| Part | Datasheet |
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AON6718L_101 |
AON6718L_101 (pdf) |
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| AON6718L 30V N-Channel MOSFET SRFET TM SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS V = 30V ID = 80A RDS ON < RDS ON < VGS = 10V VGS = 10V VGS = 4.5V 100% UIS Tested 100% Rg Tested DFN5X6 Top View SRFETTM Soft Recovery MOSFET Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 80 63 210 18 15 40 80 83 33 -55 to 150 Units V A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t 10s Steady-State Steady-State Typ 42 Max 17 60 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AON6718L Electrical Characteristics TJ=25°C unless otherwise noted |
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