FDZ7296
FDZ7296 Datasheet
FDZ7296 30V N-Channel BGA MOSFET
| Part | Datasheet |
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FDZ7296 |
FDZ7296 (pdf) |
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| FDZ7296 30V N-Channel BGA MOSFET July 2007 FDZ7296 30V N-Channel BGA MOSFET Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON . • High-side Mosfet in DC-DC converters for Server and Notebook applications • RoHS Compliant 11 A, 30 V. RDS ON = VGS = 10 V RDS ON = 12 VGS = V • Occupies only cm2 of PCB area 1/3 the area of SO-8. • Ultra-thin package less than mm height when mounted to PCB. • High performance trench technology for extremely low RDS ON • Optimized for low Qg and Qgd to enable fast switching and reduce CdV/dt gate coupling Index slot Bottom BGA 2.5X4.0 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Steady State Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 7296 FDZ7296 7’’ 2007 Fairchild Semiconductor Corporation Ratings 30 ±20 11 20 to +150 Tape width 8mm Units V A W °C °C/W Quantity 3000 units FDZ7296 30V N-Channel BGA MOSFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Leakage. On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Forward Transconductance VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C |
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