FDZ4670S
FDZ4670S Datasheet
FDZ4670S N-Channel SyncFET TM
| Part | Datasheet |
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FDZ4670S |
FDZ4670S (pdf) |
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| FDZ4670S N-Channel SyncFET TM March 2008 FDZ4670S tm N-Channel SyncFET TM 30V, 25A, - Max rDS on = at VGS = 10V, ID = 25A - Max rDS on = at VGS = 4.5V, ID = 19A - Ultra-thin package less than 0.85mm height when mounted to - Outstanding thermal transfer characteristics - Ultra-low gate charge x rDS on product - RoHS Compliant Combining Fairchild's 30V process with state-of-the-art BGA packaging, the FDZ4670S minimizes both PCB space and rDS on . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capacity, ultra-low profile packaging, low gate charge and low rDS on incorporating SyncFET technology. This device has the added benefit of an efficient monolithic Schottky body diode to reduce Trr and diode forward voltage. This MOSFET feature faster switching and lower gate charge than other MOSFETs with comparable rDS on specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency. - DC - DC Conversion - POL converters Index slot D Bottom Top FLFBGA 3.5X4.0 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation TA = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings 30 ±20 25 107 -55 to +150 Units V A W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b °C/W Device Marking 4670S Device FDZ4670S Package FLFBGA 3.5X4.0 Reel Size 13’’ Tape Width 12mm Quantity 3000 units 2008 Fairchild Semiconductor Corporation FDZ4670S N-Channel SyncFET TM Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 1mA, referenced to 25°C VGS = 0V, VDS = 24V, VGS = ±20V, VDS = 0V mV/°C ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 1mA, referenced to 25°C mV/°C VGS = 10V, ID = 25A VGS = 4.5V, ID = 19A VGS = 10V, ID = 25A, TJ = 125°C VDD = 10V, ID = 25A Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz |
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