FGPF30N45TTU
FGPF30N45TTU Datasheet
FGPF30N45T 450V, 30A PDP Trench IGBT
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FGPF30N45TTU |
FGPF30N45TTU (pdf) |
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| FGPF30N45T 450V, 30A PDP Trench IGBT FGPF30N45T 450V, 30A PDP Trench IGBT • High Current Capability • Low saturation voltage VCE sat =1.55V IC = 30A • High input impedance • Fast switching • PDP System April 2009 Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. TO-220F 1 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES ICM 1 TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 450 ±30 120 -55 to +150 -55 to +150 300 Typ. Max. Units V A W oC Units oC/W oC/W 2009 Fairchild Semiconductor Corporation FGPF30N45T 450V, 30A PDP Trench IGBT Package Marking and Ordering Information Device Marking Device FGPF30N45T FGPF30N45TTU Package TO-220F Eco Status Packaging Type Rail / Tube Qty per Tube 50ea For Fairchild’s definition of “green” Eco Status, please visit: Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250µA, VCE = VGE IC = 20A, VGE = 15V IC = 30A, VGE = 15V IC = 30A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 200V, IC = 30A, RG = VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 30A, RG = VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 30A, VGE = 15V |
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