FDZ208P

FDZ208P Datasheet

FDZ208P P-Channel 30 Volt BGA MOSFET

Part	Datasheet
FDZ208P	FDZ208P (pdf)

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FDZ208P P-Channel 30 Volt BGA MOSFET February 2006 FDZ208P P-Channel 30 Volt BGA MOSFET Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low rDS on Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS on . • Battery management • Load switch • Battery protection Gate • A, V. rDS on = VGS = V rDS on = VGS = V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package less than mm height when mounted to PCB • x 4 mm2 footprint • High power and current handling capability Bottom Index slot Absolute Maximum Ratings TA=25oC unless otherwise noted VDS VGS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Steady State Note 1a Note 1a Note 1a TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 208P FDZ208P 13’’ 2006 Fairchild Semiconductor Corporation Ratings ± 25 to +150 Tape width 8mm Units V A W °C °C/W Quantity 4000 units FDZ208P P-Channel 30 Volt BGA MOSFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage VGS = 0 V, ID = µA Breakdown Voltage Temperature ID = µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = V, VGS = 0 V IGSSF Leakage Current, Forward VGS = V, VDS = 0 V IGSSR VGS = 25 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Forward Transconductance VDS = VGS,

PDF Datasheet Preview

FDZ208P P-Channel 30 Volt BGA MOSFET

February 2006

FDZ208P P-Channel 30 Volt BGA MOSFET

Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low rDS on Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS on .
• Battery management
• Load switch
• Battery protection

Gate
• A, V. rDS on = VGS = V rDS on = VGS = V
• Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8
• Ultra-thin package less than mm height when mounted to PCB
• x 4 mm2 footprint
• High power and current handling capability

Bottom

Index slot

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDS VGS ID

Parameter

Drain-Source Voltage Gate-Source Voltage

Drain Current Continuous Pulsed

Power Dissipation Steady State

Note 1a

Note 1a Note 1a

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

Note 1a Note 1 Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
208P

FDZ208P
13’’
2006 Fairchild Semiconductor Corporation

Ratings
± 25 to +150

Tape width 8mm

Units

V A W °C
°C/W

Quantity 4000 units

FDZ208P P-Channel 30 Volt BGA MOSFET

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage VGS = 0 V, ID = µA

Breakdown Voltage Temperature ID = µA, Referenced to 25°C

Coefficient

Zero Gate Voltage Drain Current VDS = V, VGS = 0 V

IGSSF

Leakage Current, Forward

VGS = V, VDS = 0 V

IGSSR

VGS = 25 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

RDS on

Static

Forward Transconductance

VDS = VGS,

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Datasheet ID: FDZ208P 514441