FDW2521C
FDW2521C Datasheet
FDW2521C
| Part | Datasheet |
|---|---|
FDW2521C |
FDW2521C (pdf) |
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| FDW2521C July 2008 FDW2521C Complementary MOSFET This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • DC/DC conversion • Power management • Load switch • Q1 N-Channel A, 20 V. RDS ON = 21 VGS = V RDS ON = 35 VGS = V • Q2 P-Channel A, 20 V. RDS ON = 43 VGS = V RDS ON = 70 VGS = V • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation Note 1a Note 1a Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2521C FDW2521C 13’’ ±12 ±12 -55 to +150 Units °C/W Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDW2521C Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown VGS = 0 V, ID = 250 µA Voltage VGS = 0 V, ID = µA Breakdown Voltage ID = 250 µA, Referenced to 25°C Temperature Coefficient ID = µA, Referenced to 25°C IDSS Zero Gate Voltage Drain VDS = 16 V, VGS = 0 V Current VDS = V, VGS = 0 V IGSS Gate-Body Leakage VGS = +12 V, VDS = 0 V VGS = +12 V, VDS = 0 V On Characteristics Note 2 VGS th |
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