FDP8442
FDP8442 Datasheet
FDP8442 N-Channel MOSFET
| Part | Datasheet |
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FDP8442 |
FDP8442 (pdf) |
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| FDP8442 N-Channel MOSFET MPLEMENTATION June 2007 FDP8442 N-Channel MOSFET 40V, 80A, - Typ rDS on = at VGS = 10V, ID = 80A - Typ Qg 10 = 181nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability Single Pulse and Repetitive Pulse - Qualified to AEC Q101 - RoHS Compliant - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Steering - Integrated Starter / Alternator - Distributed Power Architectures and VRMs - Primary Switch for 12V Systems AD FREE I 2007 Fairchild Semiconductor Corporation FDP8442 N-Channel MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC<158oC, VGS = 10V Drain Current Continuous Tamb = 25oC, VGS = 10V, with = 62oC/W Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC Note 1 TJ, TSTG Operating and Storage Temperature Thermal Characteristics Ratings 40 ±20 80 23 See Figure 4 720 254 -55 to +175 Units V mJ W/oC Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note 2 Package Marking and Ordering Information oC/W oC/W Device Marking FDP8442 Device FDP8442 Package TO-220AB Reel Size Tube Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Tape Width N/A Min Typ Quantity 50 units Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 32V VGS = 0V TJ = 150°C VGS = ±20V ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance VDS = VGS, ID = 250µA ID = 80A, VGS = 10V ID = 80A, VGS = 10V, TJ = 175°C Dynamic Characteristics Ciss Coss Crss RG Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz 12200 1040 VGS = 0.5V, f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 80A Ig = 1mA 181 235 FDP8442 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions |
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