FDW2511NZ

FDW2511NZ Datasheet


FDW2511NZ Dual N-Channel 2.5V Specified MOSFET

Part Datasheet
FDW2511NZ FDW2511NZ FDW2511NZ (pdf)
PDF Datasheet Preview
FDW2511NZ Dual N-Channel 2.5V Specified MOSFET

May 2008

FDW2511NZ

Dual N-Channel 2.5V Specified MOSFET
! 7.1A, 20V rDS ON VGS = 4.5V rDS ON VGS = 2.5V
! Extended VGS range ±12 V for battery applications ! HBM ESD Protection Level of 3.5kV Typical note 3 ! High performance trench technology for extremely low
rDS ON ! Low profile TSSOP-8 package
! Load switch ! Battery charge ! Battery disconnect circuits

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

G2 S2 D2

TSSOP-8 Pin 1

S1 D1
2008 Fairchild Semiconductor Corporation

FDW2511NZ Dual N-Channel 2.5V Specified MOSFET

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol VDSS VGS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 4.5V, = 77oC/W Continuous TC = 100oC, VGS = 2.5V, = 77oC/W Pulsed

Power dissipation

Derate above 25°C

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Ambient Note 1 Thermal Resistance Junction to Ambient Note 2
Package Marking and Ordering Information

Device Marking 2511NZ 2

Device FDW2511NZ

Package TSSOP-8

Reel Size 13”

Ratings 20 ±12

Figure 4 13 -55 to 150

Units V

A W mW/oC
oC/W
oC/W

Tape Width 12 mm

Quantity 2500 units

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 16V VGS = 0V

TA= 100oC

VGS = ±12V

VGS = ±4.5V
±10
±250 nA

On Characteristics

VGS TH Gate to Source Threshold Voltage
rDS ON Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 7.1A, VGS = 4.5V ID = 6.9A, VGS = 4.0V ID = 6.5A, VGS = 3.1V ID = 6.3A, VGS = 2.5V

Dynamic Characteristics

CISS COSS CRSS RG Qg TOT Qg 2.5 Qgs Qgd

VDS = 10V, VGS = 0V, f = 1MHz

VGS = 0.5V, f = 1MHz

VGS = 0V to 4.5V

VGS = 0V to 2.5V

VDD = 10V ID = 7.1A Ig = 1.0mA
More datasheets: DF52J12P215PQF | DF72J12P215QF | DF62J12P215HQF | DF62J12P215PQF | DF62J12S215HQF | DF62J12S215PQF | DF62J12S2APQF | DF62J12S2AHQF | AO8801 | FQD12P10TM-F085


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDW2511NZ Datasheet file may be downloaded here without warranties.

Datasheet ID: FDW2511NZ 514415