FQD12P10TM-F085

FQD12P10TM-F085 Datasheet

FQD12P10TM_F085 P-Channel MOSFET

Part	Datasheet
FQD12P10TM-F085	FQD12P10TM-F085 (pdf)

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FQD12P10TM_F085 P-Channel MOSFET February 2010 FQD12P10TM_F085 100V P-Channel MOSFET These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • -9.4A, -100V, RDS on = = -10 V • Low gate charge typical 21 nC • Low Crss typical 65 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Note 3 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8! from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount 2010 Fairchild Semiconductor Corporation Ratings -100 ± 30 370 50 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W

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FQD12P10TM_F085 P-Channel MOSFET

February 2010

FQD12P10TM_F085
100V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
• -9.4A, -100V, RDS on = = -10 V
• Low gate charge typical 21 nC
• Low Crss typical 65 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant

G S D-PAK

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Note 3

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8! from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount
2010 Fairchild Semiconductor Corporation

Ratings -100 ± 30 370 50
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units
°C/W

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Datasheet ID: FQD12P10TM-F085 515225